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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1709
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.
FEATURES
* Low on-resistance RDS(on)1 = 9.3 m (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 m (TYP.) (VGS = 4.5 V, ID = 4.5 A) * Low Ciss : Ciss = 1850 pF (TYP.) * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5
1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
1
4 5.37 Max.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 Max.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.44
0.15
0.05 Min.
PA1709G
0.5 0.2 0.10
1.27 0.40
0.78 Max.
+0.10 -0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVARENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
40 25 9.0 36 2.0 150 -55 to + 150
V V A A W C C
Gate Protection Diode Gate Body Diode
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Source
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
Document No. G13436EJ1V0DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan
(c)
1998
PA1709
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 4.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.5 A VDS = 40 V, VGS = 0 V VGS = 25 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.5 A VGS(on) = 10 V VDD = 20 V RG = 10 ID = 9.0 A VDD = 32 V VGS = 10 V IF = 9.0 A, VGS = 0 V IF = 9.0 A, VGS = 0 V di/dt = 100 A/ s 1850 790 330 27 95 110 70 43.0 6.0 14.0 0.78 47 44 1.5 8.0 MIN. TYP. 9.3 13.8 2.0 14 10 10 MAX. 12.5 20.0 2.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
10 % 90 % 90 % ID VGS (on) 90 %
RL VDD
PG.
RG RG = 10
0 ID
VDD
PG.
50
VGS 0 t t= 1 s Duty Cycle
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
1%
2
PA1709
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 1200 mm2 0.7 mm
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60
0
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic
ID(pulse) ID(DC)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
substrate of 1200 mm2 0.7 mm
PW
Pulsed
50
R (V DS(o G n) S = 1Lim 0 V ite )d
=
ID - Drain Current - A
1
m
s
10
10 0m
ID - Drain Current - A
10
40 30 20 10
m
VGS = 10 V
4.5 V
s
Po we rD iss
D
s
1
C
ip at io
n Li m ite
TA = 25 C 0.1 Single Pulse 0.1 0
d
1
10
100
0
0.4 VDS - Drain to Source Voltage - V
0.8
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10 TA = 150 C 125 C 75 C 25 C -25 C -50 C
1
0.1 VDS = 10 V 8 6
0
2
4
VGS - Gate to Source Voltage - V
3
PA1709
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(CH-A) = 62.5 C/W
10
1
0.1
0.01 0.001 10 100 1m 10 m 100 m 1
Mounted on ceramic substrate of 1200 mm2 Single Pulse
0.7 mm
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
100
Pulsed TA = -50 C -25 C 25 C
Pulsed 60
|yfs| - Forward Transfer Admittance - S
10
40
1
75 C 125 C 150 C
20 ID = 4.5 A
0.1 0.1
VDS = 0 V 1 10 100 ID- Drain Current - A
0
5
10
15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m
40
VGS(off) - Gate to Source Cut-off Voltage - V
Pulsed
2.6
VDS = 10 V ID = 1 mA
30
20 VGS = 4.5 V 10 10 V 0 1 10 100
1.8
1.0 -40 0 40 80 120 Tch - Channel Temperature - C
ID - Drain Current - A
4
PA1709
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100
RDS(on) - Drain to Source On-state Resistance - m
40
30 VGS = 4.5 V 20 10 V 10 ID = 4.5 A -50 0 50 100 150
ISD - Diode Forward Current - A
VGS = 10 V 10 0V 1
0.1 0 0.5 1.0 1.5
0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 VGS = 0 V f = 1 MHz 1 000
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
tr 100 tf td(on) 10 td(off)
Ciss 1 000 Coss Crss 100
10 0.1
1
10
100
1 0.1
VDS = 20 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DIODE CURRENT 1 000 di/dt = 100 A/ s VGS = 0 V
100
VDS - Drain to Source Voltage - V
40
8 6
10
20 VDS 0 20 40 60 80
4 2
1 0.1
1
10
100
ID - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 9.0 A VDD = 32 V 14 20 V 12 60 8V VGS 10
5
PA1709
[MEMO]
6
PA1709
[MEMO]
7
PA1709
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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